Power
Transistors
2SD1892
Silicon
NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1252
10.
0±0.
2 5.
5±0.
2 2.
7±0.
2
4.
2±0.
2
7.
5±0.
2
s Features
q q q q
0.
7±0.
1
4.
2±0.
2
Unit: mm
14.
0±0.
5
Optimum for 35W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): 2.
5V Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 120 100 5 8 5 45 2 150 –55 to +150 Unit V V V A A W
16.
7±0.
3
φ3.
1±0.
1
4.
0
1.
4±0.
1
1.
3±0.
2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector...