Transistor
2SD2210
Silicon
NPN epitaxial planer type
For low-voltage output amplification For muting For DC-DC converter
Unit: mm
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
2.
6±0.
1
0.
4max.
s Features
q q q
Low collector to emitter saturation voltage VCE(sat).
Low ON resistance Ron.
High foward current transfer ratio hFE.
(Ta=25˚C)
Ratings 25 20 12 1 0.
5
*
45°
1.
0–0.
2
+0.
1
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Unit V ...