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Part Number
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IRF5806 |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
|
PD - 93997
IRF5806
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available i...
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|
Datasheet
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IRF5806
|
Overview
PD - 93997
IRF5806
HEXFET® Power MOSFET
q q q q
Trench Technology Ultra Low On-Resistance P-Channel MOSFET Available in Tape & Reel
VDSS
-20V
RDS(on) max
86mΩ@VGS = -4.
5V 147mΩ@VGS = -2.
5V
ID
-4.
0A -3.
0A
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
D
1 6
A D
D
2
5
D
G
3
4
S
T o p V ie w
Micro6™
Absolute Maximum Ratings
Parameter
...
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