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IRF5803

Infineon
Part Number IRF5803
Manufacturer Infineon
Description Power MOSFET
Published Dec 19, 2020
Detailed Description  Ultra Low On-Resistance  P-Channel MOSFET  Surface Mount  Available in Tape & Reel  Low Gate Charge  Lead-Free  ...
Datasheet PDF File IRF5803 PDF File

IRF5803
IRF5803

Overview
 Ultra Low On-Resistance  P-Channel MOSFET  Surface Mount  Available in Tape & Reel  Low Gate Charge  Lead-Free  Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
The TSOP-6 package with its customized lead frame produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
It's unique thermal design and RDS(on) redu...


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