Part Number
|
IRF634 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
Advanced Power MOSFET |
Published
|
Apr 16, 2005 |
Detailed Description
|
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ ...
|
Datasheet
|
IRF634
|
Overview
$GYDQFHG 3RZHU 026)(7
FEATURES
♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.
) @ VDS = 250V ♦ Lower RDS(ON): 0.
327Ω (Typ.
)
1 2 3
IRF634A
BVDSS = 250 V RDS(on) = 0.
45Ω ID = 8.
1 A
TO-220
1.
Gate 2.
Drain 3.
Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissi...
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