IRF640, RF1S640, RF1S640SM
Data Sheet January 2002
18A, 200V, 0.
180 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect
transistors.
They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching
regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17422.
Features
• 18A, 200V • r...