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Part Number
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IRF7101 |
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Manufacturer
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International Rectifier |
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Description
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HEXFET Power MOSFET |
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Published
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Apr 16, 2005 |
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Detailed Description
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www.DataSheet4U.com
PD - 9.871B
IRF7101
HEXFET® Power MOSFET
Adavanced Process Technology Ultra Low On-Resistance l Du...
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|
Datasheet
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IRF7101
|
Overview
www.
DataSheet4U.
com
PD - 9.
871B
IRF7101
HEXFET® Power MOSFET
Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description
l l
S1 G1 S2 G2
1 8
D1 D1 D2 D2
2
7
VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A
3
6
4
5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide varie...
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