DatasheetsPDF.com

IRF7101

International Rectifier
Part Number IRF7101
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Apr 16, 2005
Detailed Description www.DataSheet4U.com PD - 9.871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Du...
Datasheet PDF File IRF7101 PDF File

IRF7101
IRF7101

Overview
www.
DataSheet4U.
com PD - 9.
871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A 3 6 4 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
S O -8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 100°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt‚ Junction and Storage Temperature Range Sodering Temperature, for 10 seconds Max.
3.
5 2.
3 14 2.
0 0.
016 ± 12 3.
0 -55 to + 150 300(1.
6mm from case) Units A W W/°C V V/nS °C Thermal Resistance Ratings Parameter Rθ JA Maximum Junction-to-Ambient „ Min.
––– Typ.
––– Max 62.
5 Units °C/W 8/25/97 IRF7101 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Vo...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)