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IRF7103Q

International Rectifier
Part Number IRF7103Q
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS...
Datasheet PDF File IRF7103Q PDF File

IRF7103Q
IRF7103Q

Overview
PD - 93944C AUTOMOTIVE MOSFET Typical Applications q q q IRF7103Q HEXFET® Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection Power Doors, Windows & Seats Advanced Process Technology Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified S1 VDSS 50V RDS(on) max (mΩ) 130@VGS = 10V 200@VGS = 4.
5V ID 3.
0A 1.
5A Benefits q q q q q q 1 8 D1 D1 D2 D2 Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications.
This dual, surface mount SO-8 can dramatically reduce board space and is also available G1 S2 G2 2 7 3 6 4 5 T o p V ie w SO-8 in Tape & Reel.
Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.
5V Continuous Drain Current, VGS @ 4.
5V Pulsed Drain Current Q Power DissipationS Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyT Avalanche CurrentQ Repetitive Avalanche EnergyV Peak Diode Recovery dv/dt U Junction and Storage Temperature Range Max.
3.
0 2.
5 25 2.
4 16 ± 20 22 See Fig.
16c, 16d, 19, 20 12 -55 to + 175 Units A W mW/°C V mJ A mJ V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient S Typ.
––– ––– Max.
20 50 Units °C/W www.
irf.
com ...


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