|
Part Number
|
IRF7106 |
|
Manufacturer
|
International Rectifier |
|
Description
|
Power MOSFET |
|
Published
|
Apr 16, 2005 |
|
Detailed Description
|
PD - 9.1098B
PRELIMINARY
IRF7106
N-CHANNEL MOSFET 1 8
HEXFET ® Power MOSFET
Advanced Process Technology Ultra Low On-R...
|
|
Datasheet
|
IRF7106
|
Overview
PD - 9.
1098B
PRELIMINARY
IRF7106
N-CHANNEL MOSFET 1 8
HEXFET ® Power MOSFET
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhance...
Similar Datasheet