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Q62702-A1084

Part Number Q62702-A1084
Manufacturer Siemens Semiconductor Group
Description Silicon RF Switching Diode
Published Apr 16, 2005
Detailed Description BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt i...
Datasheet Q62702-A1084




Overview
BAR 80 l l l Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Q62702-A1084 Pin configuration 1 2 3 C A C Package 4 A MW-4 1) Maximum ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BAR 80 35 100 -55.
.
.
+125 -55.
.
.
+150 Unit V mA °C °C VR IF Top Tstg 1) Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group 1 Edition A02, 27.
02.
95 BAR 80 Electrical characteristics at TA = 25 °C, unless otherwise specified.
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capac...






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