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Q62702-A1010

Siemens Semiconductor Group
Part Number Q62702-A1010
Manufacturer Siemens Semiconductor Group
Description Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Published Apr 16, 2005
Detailed Description BAR 64... Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency ...
Datasheet PDF File Q62702-A1010 PDF File

Q62702-A1010
Q62702-A1010

Overview
BAR 64.
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Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (tape and reel) Q62702-A1041 Q62702-A1010 Q62702-A1042 Q62702-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings per diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 90°C BAR64-04,-05,-06 TS ≤ 65°C Junction temperature Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR64 BAR64-04,-05,-06 1) Symbol BAR 64 200 100 250 250 150 -55 +150°C -55.
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+150°C Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg Rth JA ≤ 320 ≤ 500 K/W Junction-soldering point BAR64 BAR64-04,-05,-06 Rth JS ≤ 240 ≤ 340 _________________________ 1)Package mounted on alumina 15mm x 16.
7mm x 0.
7mm Semiconductor Group 1 Edition A01, 23.
02.
95 BAR 64.
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Electrical characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
Value typ.
max.
Unit DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 100 mA, f = 100 MHz Charge carrier lifetime IF = 10 mA, IR = 6 mA, IR = 3 mA Series inductance V(BR) 200 0.
23 12.
5 2.
1 0.
85 1.
55 1.
4 - V V 1.
1 pF 0.
35 Ω -20 3.
8 1.
35 µs nH VF CT rf τL Ls Forward current rF= f (TS;TA*) BAR64 * mounted on alumina Forward current rF= f (TS;TA*) per each diode BAR64-05,-05,-06 mA mA TS IF I TS TA F TA TS TA TS TA Semiconductor Group 2 Edition A01, 23.
02.
95 BAR 64.
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Permissible pulse load RthJS = f (tp) BAR64 Permissible pulse load Ifmax/If DC=f(tp) BAR64 K/W Permissible pulse load RthJS= f (tp) BAR64-04,-05,-06 K/W Permissible pulse load IFmax/IFDC = f (tp) BAR64-04,-05,-06 Semiconductor G...


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