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Q62702-A1004

Part Number	Q62702-A1004
Manufacturer	Siemens Semiconductor Group
Description	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Published	Apr 16, 2005
Detailed Description	Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code ...
Datasheet	Q62702-A1004 PDF File

Overview

Silicon Schottky Diode BAT 63 q Low barrier diode for mixer and detectors up to GHz frequencies Type Ordering Code (tape and reel) Q62702-A1004 1 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package BAT 63 63 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient1) Symbol Values 3 100 150 – 55 … + 150 Unit V mA °C °C VR IF Tj Tstg Rth JA ≤ 450 K/W 1) Package mounted on aluminum 15 mm x 16.
7 mm x 0.
7 mm.
Semiconductor Group 1 10.
94 BAT 63 Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Reverse current VR = 3 V Forward voltage IF = 1 mA Diode capacitance VR = 0.
2 V, f = 1 MHz Case capacitance Differential resistance V = 0, f = 10 kHz Series inductance Value typ.
max.
Unit IR – – 190 0.
65 0.
1 30 2 10 nA mV – 300 pF – 0.
85 pF – – kΩ – – nH – – VF CT CC R0 LS Semiconductor Group 2 BAT 63 Forward current IF = f (VF) Forward current IF = f (TS; TA) Permissible Pulse load RthJS = f (tp) TA = 25 °C Permissible Pulse load IFmax / IFDC = f (tp) Semiconductor Group 3 ...

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