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Q62702-A1028

Siemens Semiconductor Group
Part Number Q62702-A1028
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Published Apr 16, 2005
Detailed Description BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electros...
Datasheet PDF File Q62702-A1028 PDF File

Q62702-A1028
Q62702-A1028

Overview
BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-02W Marking Ordering Code L Q62702-A1028 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Symbol Value 40 40 150 -55 .
.
.
+150 Unit V mA °C VR IF Tj Tstg Thermal Resistance Junction - ambient 1) RthJA RthJS ≤ 650 ≤ 810 K/W Junction - soldering point 1) Package mounted on epoxy pcb 15mm x 16.
7mm x 0.
7mm Semiconductor Group Semiconductor Group 11 Jul-02-1998 1998-11-01 BAT 62-02W Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC characteristics Reverse current typ.
0.
58 max.
10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 mA AC characteristics Diode capacitance CT CC R0 Ls - 0.
35 0.
09 225 0.
6 0.
6 - pF VR = 1 V, f = 1 MHz Case capacitance f = 1 MHz Differential resistance kΩ nH VR = 0 , f = 10 kHz Series inductance chip to ground Semiconductor Group Semiconductor Group 22 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (TA*;TS) * Package mounted on epoxy 50 mA IF TA 30 TS 20 10 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W RthJS IFmax / IFDC 10 2 - 0.
5 0.
2 0.
1 0.
05 0.
02 0.
01 0.
005 D=0 10 1 -7 10 10 -6 D=0 0.
005 0.
01 0.
02 0.
05 0.
1 0.
2 0.
5 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Jul-02-1998 1998-11-01 BAT 62-02W Forward current IF = f (V F) T A = parameter 10 4 Leakage current I R = f (VR) TA = Parameter 10 3 uA uA T A = 125°C IF 10 3 TA = 25°C TA = 85°C TA = 125°C TA = -40°C 10 2 IR T A = 85°C 10 1 10 2 10 0 T A = 25°C 10 1 0.
0 0.
2 0.
4 0.
6 0.
8 1...


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