Part Number
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PF01410A |
Manufacturer
|
Hitachi Semiconductor |
Description
|
MOS FET Power Amplifier Module for GSM Handy Phone |
Published
|
Mar 22, 2005 |
Detailed Description
|
PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd. Edition November 1997...
|
Datasheet
|
PF01410A
|
Overview
PF01410A
MOS FET Power Amplifier Module for GSM Handy Phone
ADE-208-424B (Z) Product Preview 3rd.
Edition November 1997 Application
• For GSM class4 890 to 915 MHz
Features
• • • • 4.
8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec
Pin Arrangement
3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND
4
G
G
1
G
G
Absolute Maximum Ratings (Tc = 25°C)
Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 –30 to +100 –30 to +100 4 Unit V A V mW °C °C W
PF01410A
Electrical Characteristics (Tc = 25°C)
Item Frequency range C...
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