DatasheetsPDF.com

PF01410A

Hitachi Semiconductor
Part Number PF01410A
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for GSM Handy Phone
Published Mar 22, 2005
Detailed Description PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd. Edition November 1997...
Datasheet PDF File PF01410A PDF File

PF01410A
PF01410A


Overview
PF01410A MOS FET Power Amplifier Module for GSM Handy Phone ADE-208-424B (Z) Product Preview 3rd.
Edition November 1997 Application • For GSM class4 890 to 915 MHz Features • • • • 4.
8 V operation 2 stage amplifier Small package High efficiency : 45% Typ High speed switching : 1 µsec Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 50 –30 to +100 –30 to +100 4 Unit V A V mW °C °C W PF01410A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.
D.
3rd H.
D.
VSWR (in) Pout (1) Min 890 0.
1 — 38 — — — 2.
8 Typ — — — 45 –45 –45 1.
5 3.
3 Max 915 2.
5 100 — –35 –35 3.
0 — Unit MHz V µA % dBc dBc — W Pin = +8 dBm, V DD = 4.
8 V, VAPC = 2.
5 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4 V, VAPC = 2.
5 V, RL = Rg = 50Ω, Tc = 85°C Pin = +12.
5 dBm, VDD = 4.
8 V, VAPC = 0.
1 V, RL = Rg = 50Ω, Tc = 25°C Pin = +8 dBm, V DD = 4.
8 V, RL = Rg = 50Ω, Tc = 25°C Time from Pout = –10 to +34.
5 dBm Pin = +8 dBm, V DD = 7 V, Pout ≤ 2.
8 W (At APC controlled), Rg = 50 Ω, Tc = 25°C, Output VSWR = 8 : 1 All phases Test Condition — — VDD = 10 V, VAPC = 0 V Pin = +8 dBm, V DD = 4.
8 V, Pout = 2.
8 W (At APC controlled) RL = Rg = 50Ω, Tc = 25°C Output power (2) Pout (2) 1.
5 1.
8 — W Isolation — — –35 –20 dBm Switching time t r, t f — 1 2 µs Stability — No parasitic oscillation — 2 PF01410A Package Dimensions Unit: mm 1.
8 ± 0.
2 4 8.
0 ± 0.
3 7.
8 ± 0.
3 G 3 1 G (Upper side) 2 G 3 8.
0 ± 0.
3 4 12.
3 ± 0.
3 9.
6 ± 0.
2 1 3.
7 G G 2 2.
1 1 G 2 4 G G 3 1.
8 1.
3 1.
8 1.
6 1.
8 1.
3 1.
8 (Bottom side) Remark: Coplanarity of bottom side of terminals are less than 0 ± 0.
1mm.
Hitachi C...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)