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PF01411B

Hitachi Semiconductor
Part Number PF01411B
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for E-GSM Handy Phone
Published Mar 22, 2005
Detailed Description PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For ...
Datasheet PDF File PF01411B PDF File

PF01411B
PF01411B

Overview
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov.
1997 Application • For E-GSM class4 880 to 915 MHz • For 3.
5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.
2cc High efficiency : 45% Typ at 35.
5 dBm Wide gain control range : 70 dB Typ Pin Arrangement 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND 4 G G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 8 3 4 10 –30 to +100 –30 to +100 5 Unit V A V mW °C °C W PF01411B Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.
D.
3rd H.
D.
VSWR (in) Pout (1) Min 880 0.
5 — 40 — — — 35.
5 Typ — — — 45 –45 –45 1.
5 36.
0 Max 915 2.
2 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — dBm Pin = 0dBm, VDD = 3.
5V, VAPC = 2.
2V, RL = Rg = 50Ω, Tc = 25°C Pin = 0dBm, VDD = 3.
0V, VAPC = 2.
2V, RL = Rg = 50Ω, Tc = 85°C Pin = 0dBm, VDD = 3.
5V, VAPC = 0.
5V, RL = Rg = 50Ω, Tc = 25°C Pin = 0dBm, VDD = 3.
5V, Pout = 0 to 35.
5dBm RL = Rg = 50Ω, Tc = 25°C Pin = 0dBm, VDD = 3 to 5.
1V, Pout ≤ 35.
5dBm, Vapc ≤ 2.
2V GSM pulse.
Rg = 50Ω, Tc = 25°C, Output VSWR = 6 : 1 All phases Pin = 0dBm, VDD = 3 to 5.
1V, Pout ≤ 35.
5dBm, Vapc ≤ 2.
2V GSM pulse.
Rg = 50Ω, t = 20sec.
, Tc = 25°C, Output VSWR = 10 : 1 All phases VDD = 8V, VAPC = 0V Pin = 0dBm, VDD = 3.
5V, Pout = 35.
5dBm, Vapc = control RL = Rg = 50Ω, Tc = 25°C Test Condition Output power (2) Pout (2) 33.
5 34.
2 — dBm Isolation — — –40 –36 dBm Switching time tr, tf — 1 2 µs Stability — No parasitic oscillation — Load VSWR tolerance — No degradation — 2 PF01411B Package Dimensions Unit: mm 1.
8 ± 0.
2 4 G 3 8.
0 ± 0.
3 1 G (Upper side) ...


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