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PF01412A

Hitachi Semiconductor
Part Number PF01412A
Manufacturer Hitachi Semiconductor
Description MOS FET Power Amplifier Module for E-GSM Handy Phone
Published Mar 22, 2005
Detailed Description PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application • ...
Datasheet PDF File PF01412A PDF File

PF01412A
PF01412A

Overview
PF01412A MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-477B (Z) 3rd Edition February 1997 Application • For GSM class4 890 to 915 MHz • For 5.
5V nominal DC/DC converter use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.
2cc High efficiency : 45% Typ at 3.
8 W Wide gain control range : 90 dB Typ Pin Arrangement • RF-K 4 G 3 2 1: Pin 2: Vapc 3: Vdd 4: Pout G: GND G 1 G G Absolute Maximum Ratings (Tc = 25°C) Item Supply voltage Supply current VAPC voltage Input power Operating case temperature Storage temperature Output power Symbol VDD I DD VAPC Pin Tc (op) Tstg Pout Rating 10 3 4 10 –30 to +100 –30 to +100 6 Unit V A V mW °C °C W PF01412A Electrical Characteristics (Tc = 25°C) Item Frequency range Control voltage range Drain cutoff current Total efficiency 2nd harmonic distortion 3rd harmonic distortion Input VSWR Output power (1) Symbol f VAPC I DS ηT 2nd H.
D.
3rd H.
D.
VSWR (in) Pout (1) Min 890 0.
5 — 40 — — — 3.
8 Typ — — — 45 –45 –45 1.
5 4.
5 Max 915 3.
0 100 — –35 –35 3 — Unit MHz V µA % dBc dBc — W Pin = 1 mW, VDD = 5.
5 V, VAPC = 3.
0 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 5.
0 V, VAPC = 3.
0 V, RL = Rg = 50 Ω, Tc = 80°C Pin = 1 mW, VDD = 5.
5 V, VAPC = 0.
5 V, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 5.
5 V, Pout = 3.
8 W, RL = Rg = 50 Ω, Tc = 25°C Pin = 1 mW, VDD = 5 to 6 V, Pout ≤ 3.
8 W, Vapc ≤ 3 V GSM pulse.
Rg = 50 Ω, t = 20 sec.
, Tc = 25°C, Output VSWR = 6 : 1 All phases VDD = 10 V, VAPC = 0 V Pin = 1 mW, VDD = 5.
5 V, Pout = 3.
8 W, Vapc = controlled RL = Rg = 50 Ω, Tc = 25°C Test Condition Output power (2) Pout (2) 2.
5 3.
2 — W Isolation — — –50 –40 dBm Switching time tr, tf — 1 2 µs Stability & Load VSWR tolerance — No parasitic oscillation & No degradation — 2 PF01412A Package Dimensions Unit: mm 1.
8 ± 0.
2 4 8.
0 ± 0.
3 (7.
8) G G 3 1 G G 2 3 G G G 2 (Upper side) 4 13.
75 ± 0.
3 (9.
6) (3.
7) (2.
1) 1 G G 2 8.
0 ± 0.
3 1 G (3.
7) 4 G G 3 (1.
8)(1.
...


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