MOS FET Power Amplifier Module for E-GSM Handy Phone
PF01411B MOS FET Power Amplifier Module for E-GSM Handy Phone ADE-208-434B (Z) 3rd Edition Nov. 1997 Application • For E-GSM class4 880 to 915 MHz • For 3.5 V nominal battery use Features • • • • High gain 3stage amplifier : 0 dBm input Lead less thin & Small package : 2 mm Max, 0.2cc High efficiency : 45% Typ at 35.5 dBm Wide gain control range : 70 dB Ty...
Hitachi Semiconductor