Schottky Barrier Diodes (SBD))
MA2SD19
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.
80+0.
05 –0.
03 0.
80±0.
05
0.
60+0.
05 –0.
03 0.
12+0.
05 –0.
02
(0.
80)
2 0.
30±0.
05 5˚
5˚
• Forward current (Average) IF(AV) = 200 mA rectification is possible • Low forward voltage: VF 0.
47 V • Small reverse current: IR 20 µA
(0.
60)
■ Features
1
(0.
60)
0.
01±0.
01
0+0 –0.
05
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Non-repetitive peak forward surge current * Peak forward current Forward current (Average) Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to +125 U...