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MA2SD25

Panasonic Semiconductor
Part Number MA2SD25
Manufacturer Panasonic Semiconductor
Description Silicon epitaxial planar type
Published Oct 29, 2009
Detailed Description Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.80+0.05 ...
Datasheet PDF File MA2SD25 PDF File

MA2SD25
MA2SD25

Overview
Schottky Barrier Diodes (SBD) MA2SD25 Silicon epitaxial planar type Unit: mm For super high speed switching 0.
80+0.
05 –0.
03 0.
80±0.
05 0.
60+0.
05 –0.
03 0.
12+0.
05 –0.
02 (0.
80) (0.
60) 0.
01±0.
01 5° I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward current Average forward current Non-repetitive peak forwardsurge-current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 15 15 300 200 1 125 −55 to +125 Unit V 5° 2 0.
30±0.
05 0+0 –0.
05 0.
01±0.
01 mA mA A °C °C 1 : Anode 2 : Cathode EIAJ : SC-79 SSMini2-F1 Package Marking Symbol: 6L Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) www.
DataSheet4U.
com Terminal capacitance Reverse recovery time * Symbol IR VF Ct trr VR = 6 V IF = 200 mA VR = 1 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 20 3 Conditions Min Typ Max 50 0.
39 Unit µA V pF ns Note) 1.
This product is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 250 MHz 3.
*: trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF Output Pulse trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 (0.
15) V 1.
20+0.
05 –0.
03 1.
60±0.
05 • IF(AV) = 200 mA rectification is possible • SS-Mini type 2-pin package (0.
60) I Features 1 Publication date: August 2001 SKH00029AED 1 MA2SD25 IF  V F 103 Ta = 125°C 102 104 75°C 25°C −20°C 105 IR  V R 40 35 Ct  VR Ta = 25°C Forward current IF (mA) Reverse current IR (µA) Ta = 125°C 103 75°C 10 2 Terminal capacitance Ct (pF) 20 30 25 20 15 10 5 10 1 25°C 10 10−1 10−2 1 10−3 10−1...


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