Schottky Barrier Diodes (SBD)
MA2SD24
Silicon epitaxial planar type
Unit: mm
For super high speed switching
0.
80+0.
05 –0.
03
0.
80±0.
05
0.
60+0.
05 –0.
03 0.
12+0.
05 –0.
02
(0.
80)
2 0.
30±0.
05
5˚
• Forward current (Average) IF(AV) = 200 mA rectification is possible • Small reverse current IR
(0.
60)
■ Features
1
(0.
60)
0.
01±0.
01
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Peak forward current Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IFM IF(AV) IFSM Tj Tstg Rating 20 20 300 200 1 125 −55 to +125 Unit V
0+0 –0.
05
5˚
0.
01±0.
01
V mA mA A °C °C
1: Anode 2...