Schottky Barrier Diodes (SBD)
MA3J700
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
2.
1 ± 0.
1 0.
425 1.
25 ± 0.
1 0.
425
+ 0.
1
• S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65
1 3 2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFSM Tj Tstg
Rating 40 40 500 2 125 −55 to +150
Unit V V mA A °C °C
0.
9 ± 0.
1
1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3...