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MA3J700

Panasonic
Part Number MA3J700
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.1 ± 0...
Datasheet PDF File MA3J700 PDF File

MA3J700
MA3J700

Overview
Schottky Barrier Diodes (SBD) MA3J700 Silicon epitaxial planar type Unit : mm For high-frequency rectification 2.
1 ± 0.
1 0.
425 1.
25 ± 0.
1 0.
425 + 0.
1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 500 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 40 40 500 2 125 −55 to +150 Unit V V mA A °C °C 0.
9 ± 0.
1 1 : Anode 2 : NC 3 : Cathode Flat S-Mini Type Package (3-pin) Marking Symbol: M2W Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 35 V IF = 500 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.
1 · IR, RL = 100 Ω 60 5 Conditions Min Typ Max 100 0.
55 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 400 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.
1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
15 − 0.
05 I Absolute Maximum Ratings Ta = 25°C + 0.
1 0.
3 − 0 I Features 1 MA3J700 IF  V F 103 25°C Ta = 100°C 0.
8 0.
7 Schottky Barrier Diodes (SBD) VF  Ta 104 IR  VR 102 Ta = 100°C Forward current IF (mA) Forward voltage VF (V) 0.
6 0.
5 0.
4 0.
3 100 mA 0.
2 0.
1 10 mA − 20°C 10 IF = 500 mA Reverse current IR (µA) 103 102 25°C 1 10−...


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