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MA3J741E

Panasonic
Part Number MA3J741E
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 ...
Datasheet PDF File MA3J741E PDF File

MA3J741E
MA3J741E

Overview
Schottky Barrier Diodes (SBD) MA3J741D, MA3J741E Silicon epitaxial planar type Unit : mm For switching circuits 0.
425 2.
1 ± 0.
1 1.
25 ± 0.
1 0.
425 + 0.
1 2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.
9 ± 0.
1 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) MA3J741D MA3J741E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode 1,2 Cathode 1,2 Junction temperature Storage temperature Note) * : Value per hcip Marking Symbol • MA3J741D : M2P • MA3J741E : M2R Internal Connection 1 3 2 2 1 3 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF Conditions D Min Typ Max 1 0.
4 1 0.
15 − 0.
05 • Two MA3J741s are contained in one package (S-mini type 3-pin) • Low forward rise voltage (VF) and satisfactory wave detection efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current IR 1 3 2 + 0.
1 0.
3 − 0 I Features E Unit µA V V pF ns 1.
5 1 Detection efficiency 65 % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 MA3J741D, MA3J741E IF  V F 103 1.
0 Schottky Barrier Diodes (SBD) VF  ...


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