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MA3J745

Panasonic
Part Number MA3J745
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 ...
Datasheet PDF File MA3J745 PDF File

MA3J745
MA3J745

Overview
Schottky Barrier Diodes (SBD) MA3J745 Silicon epitaxial planar type Unit : mm For switching circuits 0.
425 2.
1 ± 0.
1 1.
25 ± 0.
1 0.
425 + 0.
1 2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65 1 3 2 • Optimum for low-voltage rectification because of its low forward rise voltage (VF) (Low VF type of MA3X704A) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature Symbol VR VRM IF IFM Tj Tstg Rating 30 30 30 150 125 −55 to +125 Unit V V mA mA °C °C 0.
9 ± 0.
1 1 : Anode 2 : NC 3 : Cathode EIAJ : SC-70 Flat S- Mini Type Package (3-pin) Marking Symbol: M2M Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Ω Vin = 3 V(peak), f = 30 MHz RL = 3.
9 kΩ, CL = 10 pF 1.
5 1.
0 Conditions Min Typ Max 30 0.
3 1.
0 Unit µA V V pF ns Detection efficiency 65 0.
15 − 0.
05 + 0.
1 0.
3 − 0 I Features % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU Input Pulse Output Pulse tr 10% tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 1 MA3J745 IF  V F 103 Schottky Barrier Diodes (SBD) VF  Ta 1.
0 IR  VR 104 Ta = 125°C Forward voltage IF (mA) 102 75°C 25°C − 20°C Forward voltage VF (V) Reverse current IR (µA) Ta = 125°C 0.
8 IF = 30 mA 0.
6 103 75°C 102 10 10 mA 0.
4 1 10 25°C 10−1 0.
2 ...


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