Schottky Barrier Diodes (SBD)
MA3J744
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit For small current rectification I Features
• Small S-mini type package allowing high-density mounting • Allowing to rectify under (IF(AV) = 200 mA) condition
2.
1 ± 0.
1 0.
425 1.
25 ± 0.
1 0.
425
+ 0.
1
2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65
1 3 2
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature
Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg
Rating 30 30 200 300 1 150 −55 to +150
Unit V V mA mA A °C °C
0.
9 ± 0.
1
1 : Anode 2 : NC 3 : Cathode EIAJ : ...