Schottky Barrier Diodes (SBD)
MA3XD11
Silicon epitaxial planar type
Unit : mm
For high-frequency rectification
0.
65 ± 0.
15
2.
8 − 0.
3
+ 0.
2
1.
5 − 0.
05
+ 0.
25
0.
65 ± 0.
15
2
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature
VR VRRM IF(AV) IFSM Tj Tstg
20 25 1.
0 3 125 −55 to + 125
V V A A °C °C
1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin)
Marking Symbol: M6K Internal Connection
Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
1 3 2
I Electrical Characteristics Ta = 25°C ± 3°C
Parameter Reverse c...