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MA3XD11

Panasonic
Part Number MA3XD11
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.65 ± ...
Datasheet PDF File MA3XD11 PDF File

MA3XD11
MA3XD11

Overview
Schottky Barrier Diodes (SBD) MA3XD11 Silicon epitaxial planar type Unit : mm For high-frequency rectification 0.
65 ± 0.
15 2.
8 − 0.
3 + 0.
2 1.
5 − 0.
05 + 0.
25 0.
65 ± 0.
15 2 Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Non-repetitive peak forward surge current*2 Junction temperature Storage temperature VR VRRM IF(AV) IFSM Tj Tstg 20 25 1.
0 3 125 −55 to + 125 V V A A °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M6K Internal Connection Note) *1 : With a alumina PC board *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 1 3 2 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Symbol IR VF Ct VR = 20 V IF = 1.
0 A VR = 0 V, f = 1 MHz 180 Conditions Min Typ Max 200 0.
45 Unit µA V pF Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment 2.
Rated input/output frequency: 400 MHz 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 0.
8 Parameter Symbol Rating Unit 1.
1 − 0.
1 0.
16 − 0.
06 + 0.
2 + 0.
1 I Absolute Maximum Ratings Ta = 25°C 0.
4 − 0.
05 + 0.
1 • Sealed in the Mini type 3-pin package • Allowing to rectify under (IF(AV) = 1 A) condition • Low forward rise voltage VF 0.
95 1.
9 ± 0.
2 2.
9 − 0.
05 1 + 0.
2 0.
95 3 1.
45 I Features 1 MA3XD11 IF  V F 10 Ta = 125°C 1 1.
0 Schottky Barrier Diodes (SBD) VF  Ta IR  VR Ta = 125°C 10−1 10−2 Forward voltage VF (V) Forward current IF (A) Reverse current IR (A) 75°C 10−1 10−2 10−3 10−4 10−5 10−6 25°C − 20°C 0.
8 10−3 75°C 0.
6 10−4 25°C 0.
4 IF = 1 A 10−5 0.
2 100 mA 10 mA 10−6 0 0.
2 0.
4 0.
6 0.
8 1 1.
2 0 −40 10−7 0 40 80 120 160 0 5 10 15 20 25 30 Forward voltage VF (V) Ambient temperature Ta (°C) Reverse voltage VR (V) IR  T a 100 VR = 20 V 10 10 V 5V 1 Reverse current IR (mA...


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