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MA3XD14E

Panasonic
Part Number MA3XD14E
Manufacturer Panasonic
Description Silicon epitaxial planar type (cathode common)
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3XD14E Silicon epitaxial planar type (cathode common) Unit : mm For high-speed switchi...
Datasheet PDF File MA3XD14E PDF File

MA3XD14E
MA3XD14E

Overview
Schottky Barrier Diodes (SBD) MA3XD14E Silicon epitaxial planar type (cathode common) Unit : mm For high-speed switching circuits I Features • Mini type 3-pin package • Low forward rise voltage VF (VF < 0.
4 V) • Cathode common type 2.
9 − 0.
05 + 0.
2 2.
8 − 0.
3 0.
65 ± 0.
15 1.
5 − 0.
05 + 0.
25 + 0.
2 0.
65 ± 0.
15 0.
95 1.
9 ± 0.
2 1 3 2 0.
95 1.
45 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current*2 Forward current (DC) Peak forward current Single Double*1 Single Double*1 Tj Tstg IFM Symbol VR VRRM IFSM IF Rating 20 20 1 100 70 300 200 125 −55 to +125 °C °C 1 mA Unit 0.
8 V V A mA 1 : Anode 1 2 : Anode 2 3 : Cathode 1 Cathode 2 Mini Type Package (3-pin) Marking Symbol: M5H Internal Connection Junction temperature Storage temperature Note) *1 : The value for operating one chip *2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 1.
1 − 0.
1 3 2 I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Ct trr VR = 10 V IF = 5 mA IF = 100 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 10 mA, RL = 100 Ω 25 3.
0 Conditions Min Typ Max 20 0.
27 0.
40 Unit µA V V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 250 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 10 mA IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
16 − 0.
06 + 0.
2 + 0.
1 0.
4 − 0.
05 + 0.
1 1 MA3XD14E IF  V F 1 10−1 Ta = 125°C Schottky Barrier Diodes (SBD) IR  V R 10−1 10−2 Forward current IF (A) ...


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