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MA3XD17

Panasonic
Part Number MA3XD17
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against...
Datasheet PDF File MA3XD17 PDF File

MA3XD17
MA3XD17

Overview
Schottky Barrier Diodes (SBD) MA3XD17 Silicon epitaxial planar type Unit : mm For rectification For protection against reverse current I Features • Mini type 3-pin package • High breakdown voltage VR = 100 V 2.
8 0.
65 ± 0.
15 + 0.
2 − 0.
3 1.
5 − 0.
05 + 0.
25 0.
65 ± 0.
15 0.
95 2.
9 − 0.
05 1.
9 ± 0.
2 1 3 2 + 0.
2 0.
95 1.
45 + 0.
2 − 0.
1 Parameter Reverse voltage (DC) Peak reverse voltage Non-repetitive peak forward surge current* Average forward current Junction temperature Storage temperature Symbol VR VRM IFSM IF(AV) Tj Tstg Rating 100 100 1.
5 300 125 −55 to +150 Unit V V A mA °C °C 1 : Anode 2 : NC 3 : Cathode Mini Type Package (3-pin) Marking Symbol: M5K Internal Connection 1 3 2 Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) I Electrical Characteristics Ta = 25°C ± 3°C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 100 V IF = 300 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.
1 · IR, RL = 100 Ω 0.
50 100 7 Conditions Min Typ Max 200 0.
58 Unit µA V pF ns Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
1.
Rated input/output frequency: 250 MHz 3.
* : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.
1 · IR IF = 100 mA IR = 100 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0 to 0.
1 0.
1 to 0.
3 0.
4 ± 0.
2 1.
1 0.
8 0.
16 − 0.
06 I Absolute Maximum Ratings Ta = 25°C + 0.
1 0.
4 − 0.
05 + 0.
1 1 MA3XD17 IF  V F 10 1 Schottky Barrier Diodes (SBD) IR  V R 100 Ct  VR 1 Forward current IF (A) 10−1 − 20°C Reverse current IR (A) Ta = 125°C 75°C 25°C Terminal capacitance Ct (pF) 10−1 Ta = 125°C 10−2 75°C 10−3 80 60 10−2 10−3 40 10−4 25°C 10−4 10−5...


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