NTE2932 MOSFET N−Channel, Enhancement Mode High Speed Switch TO3PML Type Package Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.
0713 Typ D Lower Leakage Current: 105 A (Max) @ VDS = 200V D G S Absolute Maximum Ratings: Drain−to−Source Voltage, VDSS .
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200V Drain CCuornretinntu, oIDus PulsTTeCCd==(N++o21t50e50C15C).
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