July 1997
NDP6030 / NDB6030 N-Channel Enhancement Mode Field Effect
Transistor
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
46 A, 30 V.
RDS(ON) = 0.
018 @ VGS=10 V.
Critical DC electrical parameters specified at elevated...