DatasheetsPDF.com

NDP603AL

Fairchild
Part Number NDP603AL
Manufacturer Fairchild
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description The...
Datasheet PDF File NDP603AL PDF File

NDP603AL
NDP603AL

Overview
January 1996 NDP603AL / NDB603AL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features 25A, 30V.
RDS(ON) = 0.
022Ω @ VGS=10V.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
High density cell design for extremely low RDS(ON).
175°C maximum junction temperature rating.
______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise noted NDP603AL 30 ± 20 25 (Note 1) NDB603AL Units V V A Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed 100 50 0.
4 -65 to 175 275 W W/°C °C °C PD Total Power Dissipation @ TC = 25°C Derate above 25°C TJ,TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds THERMAL CHARACTERISTICS RθJC RθJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient 2.
5 62.
5 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDP603AL.
SAM Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE AVALANCHE RATINGS (Note 2) W DSS IAR BVDSS IDSS IGSSF IGSSR VGS(th) Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current VDD = 15 V, ID = 25 A 100 25 mJ A OFF CHARACTERISTICS Drain-Source Breakdown Voltage Ze...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)