July 1996
NDS335N N-Channel Logic Level Enhancement Mode Field Effect
Transistor
General Description
These N -Channel logic level enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
1.
7 A, 20 V.
RDS(ON) = 0.
14 Ω @ VGS= 2.
7 V RDS(ON) = 0.
11 Ω @ VGS= 4.
5 V.
Indust...