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NDS331N

Fairchild
Part Number NDS331N
Manufacturer Fairchild
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel lo...
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NDS331N
NDS331N

Overview
July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features 1.
3 A, 20 V.
RDS(ON) = 0.
21 Ω @ VGS= 2.
7 V RDS(ON) = 0.
16 Ω @ VGS= 4.
5 V.
Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
_______________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 25°C unless otherwise noted NDS331N 20 8 (Note 1a) Units V V A W Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) 1.
3 10 0.
5 0.
46 -55 to 150 Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 250 (Note 1) °C/W °C/W Thermal Resistance, Junction-to-Case 75 © 1997 Fairchild Semiconductor Corporation NDS331N Rev.
E ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS= 0 V TJ =125°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = V...


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