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NDS336P

Fairchild
Part Number NDS336P
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Cha...
Datasheet PDF File NDS336P PDF File

NDS336P
NDS336P

Overview
June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -1.
2 A, -20 V, RDS(ON) = 0.
27 Ω @ VGS= -2.
7 V RDS(ON) = 0.
2 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
0V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
Compact industry standard SOT-23 surface package.
Mount ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG Parameter Drain-Source Voltage T A = 25°C unless otherwise noted NDS336P -20 ±8 (Note 1a) Units V V A Gate-Source Voltage - Continuous Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) -1.
2 -10 0.
5 0.
46 -55 to 150 W Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDS336P Rev.
E Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS IGSS VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID ...


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