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NDS332P

Fairchild
Part Number NDS332P
Manufacturer Fairchild
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor
Published May 12, 2005
Detailed Description June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel l...
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NDS332P
NDS332P

Overview
June 1997 NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Features -1 A, -20 V, RDS(ON) = 0.
41 Ω @ VGS= -2.
7 V RDS(ON) = 0.
3 Ω @ VGS = -4.
5 V.
Very low level gate drive requirements allowing direct operation in 3V circuits.
VGS(th) < 1.
0V.
Proprietary package design using copper lead frame for superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and...


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