SIPMOS® Small-Signal
Transistor
BSS 135
q q q q q q q
VDS 600 V ID 0.
080 A RDS(on) 60 Ω
N channel Depletion mode High dynamic resistance Available grouped in VGS(th)
1
2
3
Type
Ordering Code
Tape and Reel Information
Pin Configuration Marking 1 G 2 D 3 S SS135
Package TO-92
BSS 135 Q67000-S237 E6325: 2000 pcs/carton; Ammopack Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 42 ˚C Pulsed drain current, Max.
power dissipation,
Symbol
Values 600 600 ± 14 ± 20 0.
080 0.
24 1.
0 – 55 … + 150 ≤ 125 E 55/150/56
Unit V
VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA
– –
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