Transistors
2SB1699
Silicon
PNP epitaxial planar type
Unit: mm
For power amplification ■ Features
• Low collector-emitter saturation voltage VCE(sat) • Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
4.
5±0.
1 1.
6±0.
2 1.
5±0.
1
4.
0+0.
25 –0.
20
2.
5±0.
1 3˚
0.
4±0.
04
0.
4±0.
08 1.
5±0.
1 3˚
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating −60 −60 −6 −2 −4 1 150 −55 to +150
Unit...