MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect
Transistor
N–Channel Enhancement–Mode
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designed for wideband large–signal output and driver stages up to 400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance Output Power = 30 Watts Minimum Gain = 13 dB Efficiency — 60% (Typical) • Small–Signal and Large–Signal Characterization • Typical Performance at 400 MHz, 28 Vdc, 30 W Output = 7.
7 dB Gain • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 1.
5 dB (Typ) at 1.
0 A, 150 MHz • Excellent Thermal Stability, Ideally Suited For Class A Operation • Facilitates Manual Gain Control, ALC and...