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MRF1001A

Microsemi
Part Number MRF1001A
Manufacturer Microsemi
Description RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Published Aug 21, 2005
Detailed Description 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DIS...
Datasheet PDF File MRF1001A PDF File

MRF1001A
MRF1001A

Overview
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MRF1001A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.
0 Ghz (typ) @ 300MHz, 14v, 90mA, G U max 2 = 11.
5 dB (typ) @ 300 MHz, 14v, 90mA 1.
Emitter 2.
Base 3.
Collector |S21| = 11 dB (typ) @ 300 MHz, 14v, 90mA TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment.
Applications include amplifier; pre-driver, driver, and output stages.
Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 30 3.
5 200 Unit Vdc Vdc Vdc mA Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.
0 5.
71 Watts mW/ ºC MSC1311.
PDF 10-25-99 MRF1001A ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCEO BVEBO BVCBO ICBO VCE(sat) Test Conditions Min.
Collector-Emitter Breakdown Voltage (IC = 5.
0 mAdc) Emitter-Base Breakdown Voltage (IC= 0.
1 mAdc) Collector-Base Breakdown Voltage (IC=1.
0 mAdc) Collector-Base (VCB = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 50mA, IC/IB = 10) 20 3.
5 30 Value Typ.
50 100 Max.
Unit Vdc Vdc Vdc µA mV (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.
0 Vdc) 50 300 - DYNAMIC Symbol fT Test Conditions Min.
Current-Gain - Bandwidth Product (IC = 90 mAdc, VCE = 14 Vdc, f = 300 MHz) Value Typ.
3.
0 Max.
Unit GHz MSC1311.
PDF 10-25-99 MRF1001A FUNCTIONAL Symbol Test Conditions Min.
Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz IC = 90 mAdc, VCE = 14Vdc, f = 300 MHz Value Typ.
11.
5 11.
7 11.
13 Max.
Unit dB dB dB G U max 10 MAG 2 |S21| Table 1.
Common Emitter S-Parameters, @ VCE = 14 V, IC = 90 mA f S11 (MHz) 100 200 300 400 500 600 700 800 900 1000 |S11| .
165 .
113...


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