MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF182/D
The RF MOSFET Line
RF Power Field Effect
Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
• High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode Inductances
D
MRF182 MRF182S
30 W, 1.
0 GHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs
G
CASE 360B–01, STYLE 1 (MRF182)
S CASE 360C–03, STYLE 1 (MRF182S)
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 70°C Derate above 70°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 ± 20 74 0.
57 – 65 to +...