m o .
c U Plastic-Encapsulate
Transistors SOT-89 4 t e e h S
TRANSISTOR (
NPN) SOT-89 2SD2908 a t a 1.
D FEATURES .
w dissipation Power 2.
w 1 P : 0.
5 W (Tamb=25℃) w 2
BASE COLLECTOR
CM
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
Collector current 5 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO
Collector-base breakdown voltage
Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage Transition frequency
Collector ...