C-Band Internally Matched FET
FEATURES ・High Output Power: P1dB=47.0dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~6.4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. w w w ....
Eudyna Devices