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FLM5964-45F

Eudyna Devices
Part Number FLM5964-45F
Manufacturer Eudyna Devices
Description C-Band Internally Matched FET
Published Jan 12, 2006
Detailed Description FEATURES ・High Output Power: P1dB=47.0dBm(Typ.) ・High Gain: G1dB=8.5dB(Typ.) ・High PAE: ηadd=39%(Typ.) ・Broad Band: 5.9~...
Datasheet PDF File FLM5964-45F PDF File

FLM5964-45F
FLM5964-45F

Overview
FEATURES ・High Output Power: P1dB=47.
0dBm(Typ.
) ・High Gain: G1dB=8.
5dB(Typ.
) ・High PAE: ηadd=39%(Typ.
) ・Broad Band: 5.
9~6.
4GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system.
w w w .
D a t a S e e h U t4 .
m o c FLM5964-45F C-Band Internally Matched FET ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25o C) Item Drain-Source Voltage Gate-Source Voltage Total Pow er Dissipation Storage Tem perature Channel Tem perature Symbol V DS V GS PT Ts t g Tch RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25o C) Item DC Input Voltage Forw ard Gate Current Reverse Gate Current Sym bol V DS IGF IGR ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25o C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.
C.
P.
Pow er Gain at 1dB G.
C.
P.
Drain Current Pow er-added Efficiency Gain Flatness 3rd Order Interm odulation Distortion Therm al Resistance Channel Tem perature Rise CASE STYLE : IK ESD w w w .
D Sym bol IDSS gm Vp V GSO P1d B G1d B Id s r ηad d ∆G IM3 Rth ∆ Tch t a S a Condition RG=10Ω RG=10Ω e h t e Rating 15 -5 115 -65 to +175 175 U 4 .
c m o Unit V V W o C o C Unit V mA mA Lim it ≤ 10 ≤ 108 ≥ -23.
2 Condition VDS=5V, VGS=0V VDS=5V, IDS=8.
0A VDS=5V, IDS=480mA IGS=-480uA VDS=10V f=5.
9 - 6.
4 GHz IDS(DC)=8.
0A(typ.
) Zs=ZL=50Ω f=6.
4 GHz ∆ f=10MHz, 2-tone Test Pout=35.
5dBm(S.
C.
L.
) Channel to Case 10V x IDS(DC) X Rth 2000V 　 ~ Lim it Min.
-0.
5 -5.
0 46.
0 7.
5 -37 Typ.
24 16 -1.
5 47.
0 8.
5 11 39 -40 1.
1 Max.
-3.
0 13 1.
2 - Unit A S V V dBm dB A % dB dBc Class III Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.
5kΩ) Edition 1.
3 September 2004 1 w w w .
D at G.
C.
P.
:Gain Compression Point a Sh 1.
3 100 t e e 4U o .
m o c C/W o C FLM5964-45F C-Band Internally Matched FET Power Derating Curve 140 Total Power Dissipat...


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