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FLM5964-45F

SUMITOMO
Part Number FLM5964-45F
Manufacturer SUMITOMO
Description C-Band Internally Matched FET
Published Jul 14, 2014
Detailed Description FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.0dBm(Typ.) • High Gain: G1dB=8.5dB(Typ.)...
Datasheet PDF File FLM5964-45F PDF File

FLM5964-45F
FLM5964-45F


Overview
FLM5964-45F C-Band Internally Matched FET FEATURES • High Output Power: P1dB=47.
0dBm(Typ.
) • High Gain: G1dB=8.
5dB(Typ.
) • High PAE: hadd=39%(Typ.
) • Broad Band: 5.
9 to 6.
4GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package DESCRIPTION The FLM5964-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.
C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115 -65 to +175 175 Limit <= 10 <= 108 >=-23.
2 Limit Typ.
24 16 -1.
5 47.
0 8.
5 11 39 -40 Unit V V W deg.
C deg.
C Unit V mA mA RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25deg.
C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=10ohm Reverse Gate Current IGR RG=10ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.
C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1dB G.
C.
P.
Power Gain at 1dB G.
C.
P.
Drain Current Power-Added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1dB G1dB Idsr hadd DG IM3 Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=8.
0A VDS=5V, IDS=960mA IGS=-960uA VDS=10V f= 5.
9 to 6.
4 GHz IDS(DC)=8.
0A (typ.
) Zs =ZL=50 ohm f=6.
4 GHz Df=10MHz, 2-tone Test Pout=35.
5dBm(S.
C.
L.
) Channel to Case 10V x IDS(DC) x Rth IK Min.
-0.
5 -5.
0 46.
0 7.
5 -37 Max.
-3.
0 13 1.
2 - Unit A S V V dBm dB A % dB dBc 1.
1 1.
3 deg.
C/W 100 deg.
C G.
C.
P.
: Gain Compression Point Class 3A ESD Note : Based on JEDEC　JESD22-A114 (C=100pF, R=1.
5kohm) RoHS Compliance Yes 4000V to 8000V Edition 1.
4 Jan.
2013 1 FLM5964-45F C-Band Internally Matched FET Power Derating Curve Output Power & P.
A.
E.
vs.
Input Power VDS=10V, IDS(DC), f=6.
15GHz Power Added Efficiency (%) Input Power (dBm) IMD vs.
Output Power VDS=10V...


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