2SK3407
TOSHIBA Field Effect
Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching
Regulator Applications
Unit: mm
· · · ·
Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C
Drain power dissipation (Tc = 25°C) Single pul...