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2SK3408

NEC
Part Number 2SK3408
Manufacturer NEC
Description N-Channel MOSFET
Published Mar 30, 2005
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2S...
Datasheet PDF File 2SK3408 PDF File

2SK3408
2SK3408

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3408 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SK3408 is a switching device which can be driven directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm) 0.
4 +0.
1 –0.
05 0.
16+0.
1 –0.
06 0.
65–0.
15 +0.
1 2.
8 ±0.
2 3 1.
5 0 to 0.
1 1 2 FEATURES • Can be driven by a 4-V power source • Low on-state resistance RDS(on)1 = 195 mΩ MAX.
(VGS = 10 V, ID = 0.
5 A) RDS(on)2 = 250 mΩ MAX.
(VGS = 4.
5 V, ID = 0.
5 A) RDS(on)3 = 260 mΩ MAX.
(VGS = 4.
0 V, ID = 0.
5 A) • Built-in G-S protection diode against ESD.
0.
95 0.
95 0.
65 0.
9 to 1.
1 1.
9 2.
9 ±0.
2 1 : Gate 2 : Source 3 : Drain ORDERING INFORMATION PART NUMBER 2SK3408 PACKAGE SC-96 Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Drain to Gate Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VDGS VGSS ID(DC) ID(pulse) PT1 Note2 43±5 43±5 ±20 ±1.
0 ±4.
0 0.
2 1.
25 150 –55 to +150 V V V A A W W °C °C Gate Body Diode Gate Protection Diode Marking: XF Source Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Mounted on FR-4 Board, t ≤ 5 sec.
Remark PT2 Tch Tstg The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC...


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