DatasheetsPDF.com

2SK3407

Toshiba Semiconductor
Part Number 2SK3407
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Feb 8, 2006
Detailed Description 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Un...
Datasheet PDF File 2SK3407 PDF File

2SK3407
2SK3407

Overview
2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3407 Switching Regulator Applications Unit: mm · · · · Low drain-source ON resistance: RDS (ON) = 0.
48 Ω (typ.
) High forward transfer admittance: |Yfs| = 7.
5 S (typ.
) Low leakage current: IDSS = 100 µA (max) (VDS = 450 V) Enhancement-mode: Vth = 2.
4~3.
4 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 450 450 ±30 10 40 40 222 10 4 150 -55~150 Unit V V V A W mJ A mJ °C °C Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ― SC-67 2-10R1B Weight: 1.
9 g (typ.
) Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.
125 62.
5 Unit °C/W °C/W Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.
7 mH, RG = 25 W, IAR = 10 A Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-08-12 2SK3407 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) ïYfsï Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±25 V, VDS = 0 V IG = ±10 mA, VDS = 0 V VDS = 450 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 5 A VDS = 10 V, ID = ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)